Drive circuit for power element

ABSTRACT

There is provided a drive circuit for turning on/off a power element which controls a main current flow between a first main electrode and a second main electrode in response to a drive signal applied to a control electrode. The drive circuit includes a a first semiconductor switching element and a second semiconductor switching element which are connected in series with a semiconductor element and provided between the power supply terminal and the ground terminal, third semiconductor switching element and a fourth semiconductor switching element which are connected in series, and a control circuit which controls turn-on/off of the power element by turning on/off the first to fourth semiconductor switching elements. The semiconductor element has a positive temperature characteristic.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of PCT Application No.PCT/JP2017/036047 filed Oct. 3, 2017, which claims the benefit ofJapanese Patent Application No. 2016-203152 filed Oct. 14, 2016. Thedisclosures of the prior applications are hereby incorporated byreference herein in their entireties.

TECHNICAL FIELD

The present invention relates to a drive circuit which turns on/off apower element such as an IGBT and, in particular, relates to the drivecircuit for the power element having a simple configuration in whichpower conversion efficiency of the power element can be improved withoutbeing affected by an operation voltage threshold value of the powerelement having a temperature dependency.

BACKGROUND ART

FIG. 6 is a schematic configuration diagram showing an example of adrive circuit 1 of a related art which turns on/off a power element 2such as an IGBT. The drive circuit 1 plays a role of turning on/off adrive signal applied to the gate of the IGBT (power element) 2 and thuscontrolling a main current flow between the collector and the emitter ofthe IGBT 2. A current Ic supplied to a load (RL) connected between amain power supply 3 and the IGBT 2 is controlled in accordance with theon/off of the IGBT 2.

Schematically, the drive circuit 1 includes a first semiconductorswitching element Q1 and a second semiconductor switching element Q2which are connected in series and provided between a power supplyterminal (Vcc) of a power supply 4 and a ground terminal (GND). Further,the drive circuit 1 includes a third semiconductor switching element Q3and a fourth semiconductor switching element Q4 which are connected inseries and provided between the power supply terminal (Vcc) of the powersupply 4 and the ground terminal (GND). A series connection point (nodeP1) between the first and second semiconductor switching elements Q1, Q2is connected to the gate of the IGBT 2 via a gate resistor RG. A seriesconnection point (node P2) between the third and fourth semiconductorswitching elements Q3, Q4 is connected to the emitter of the IGBT 2.

The first to fourth semiconductor switching elements Q1, Q2, Q3, Q4 areeach formed of, for example, a MOS-FET and constitute a switch matrixcircuit in which the first to fourth semiconductor switching elementsare turned on/off in association with one another and thus turn the IGBT2 on/off under the control of a control circuit 5. The control circuit 5turns on/off the first to fourth semiconductor switching elements Q1,Q2, Q3, Q4 in association with one another in accordance with a controlsignal SG supplied from the outside, thereby controlling on/off of theIGBT 2.

FIG. 7 shows operation timings which represent state changes inrespective portions of the drive circuit 1 according to the controlsignal SG and voltage changes in the IGBT 2. In FIG. 7, V(P1) representsthe voltage change in the node P1, V(E) represents the voltage change inthe emitter (node P2) of the IGBT 2, V(G) represents the voltage changein the gate of the IGBT 2, and Vge represents the voltage change betweenthe gate and the emitter of the IGBT 2.

As shown in FIG. 7, the drive circuit 1 positively or negatively biasesthe gate emitter voltage Vge of the IGBT 2 according to the controlsignal SG, thereby turning the IGBT 2 on/off. That is, the drive circuit1 turns on each of the first and fourth semiconductor switching elementsQ1, Q4 and turns off each of the second and third semiconductorswitching elements Q2, Q3, thereby setting the voltage of the node P1 toa power supply voltage Vcc and setting the voltage of the node P2 to avoltage (0 V) of the ground terminal (GND). Thus, the drive circuit 1applies the voltage (power supply voltage Vcc) of the node P1 to thegate of the IGBT 2, the emitter of which is set to 0 V, via the gateresistor RG, thereby positively biasing the IGBT 2. Consequently, theIGBT 2 is turned on by the positive bias (+Vcc) applied between the gateand the emitter thereof.

The drive circuit 1 turns off each of the first and fourth semiconductorswitching elements Q1, Q4 and turns on each of the second and thirdsemiconductor switching elements Q2, Q3, thereby setting the voltage ofthe node P1 to 0 V and setting the voltage of the node P2 to the powersupply voltage Vcc. Thus, the drive circuit 1 grounds the gate of theIGBT 2, the emitter of which is set to the power supply voltage Vcc, viathe gate resistor RG, thereby negatively biasing the IGBT 2.Consequently, the IGBT 2 is turned off by the negative bias (−Vcc)applied between the gate and the emitter thereof. The drive circuit 1configured in this manner is described in detail in, for example,Japanese Patent No. 5011585.

The drive circuit 1 disclosed in Japanese Patent No. 5011585 can turnthe IGBT 2 on/off by positively or negatively biasing the IGBT 2 usingonly the positive power supply voltage Vcc which is outputted from thepower supply 4. Thus, this drive circuit is superior in terms of notrequiring a negative power supply. However, the drive circuit 1 of therelated art is configured to apply the voltage V(P1) of the node P1 tothe gate of the IGBT 2 via the gate resistor RG, therebycharging/discharging a gate capacitor of the IGBT 2. Accordingly, therearises the defect that a switching loss at the turn-on and off times ofthe IGBT 2 is large.

In this respect, Japanese Patent No. 5011585 discloses that theswitching loss at the turn-on/off times of the IGBT 2 is reduced byshifting the on/off timings of the first to fourth semiconductorswitching elements Q1, Q2, Q3, Q4 therebetween. However, in the case ofshifting the on/off timings of the first to fourth semiconductorswitching elements Q1, Q2, Q3, Q4 therebetween, there arises the newproblem that the configuration of the control circuit 5 is complicated.

The IGBT 2 has a negative temperature characteristic in which anoperation voltage threshold value Vth thereof decreases with temperatureincrease. Despite of this, the drive circuit 1 of the related art turnsthe IGBT 2 on by merely applying the voltage of the node P1 (powersupply voltage Vcc) to the gate of the IGBT 2 via the gate resistor RGas a positive bias voltage. Thus, for example, when the operationvoltage threshold value Vth of the IGBT 2 decreases with temperatureincrease, a voltage equal to or larger than a positive bias voltagenecessary for maintaining the on state of the IGBT 2 is applied to thegate thereof.

Thus, it is necessary to use an IGBT having sufficient short-circuitwithstand capability as the IGBT 2 in prospect of decrease of theoperation voltage threshold value Vth of the IGBT 2. In general, an IGBThaving sufficient short-circuit withstand capability is expensive, andtherefore the entire configuration of a power converter using the IGBT 2becomes inevitably large and expensive.

SUMMARY

The invention has been made in view of the above circumstances, and anobject thereof is to provide a drive circuit for a power element whichhas a simple configuration, can suitably turn on/off the power elementwithout using the gate resistor described above, and, in particular, canprevent application of an excessive voltage to a control electrode ofthe power element when positively biasing the power element and thus canreduce short-circuit withstand capability required for the powerelement.

A drive circuit for a power element according to an embodiment of thepresent invention is configured to turn on/off the power element, forexample, an IGBT or an N-type power MOS-FET which is configured tocontrol a main current flow between a first main electrode and a secondmain electrode in response to a drive signal applied to a controlelectrode.

The drive circuit for the power element according to the presentinvention includes a first series circuit which includes a firstsemiconductor switching element and a second semiconductor switchingelement connected in series with a semiconductor element or a constantvoltage supply, having a positive temperature characteristic,therebetween. The first series circuit is provided between a powersupply terminal and a ground terminal. In the first series circuit, aseries connection point of the second semiconductor switching elementprovided on the ground terminal side and the semiconductor element orthe constant voltage supply having the positive temperaturecharacteristic is connected to the control electrode of the powerelement.

The drive circuit further includes a second series circuit whichincludes a third semiconductor switching element and a fourthsemiconductor switching element connected in series. The second seriescircuit is provided between the power supply terminal and the groundterminal. In the second series circuit, a series connection point of thethird semiconductor switching element and the fourth semiconductorswitching element is connected to the second main electrode of the powerelement.

Further, the drive circuit includes, in addition to the first and secondseries circuits described above, a control circuit which is configuredto control turn-on/off of the power element by turning on/off the firstto fourth semiconductor switching elements in association with oneanother in response to a control signal.

The power element may include, for example, an IGBT which includes thecontrol electrode as a gate, the first main electrode as a collector,and the second main electrode as an emitter. Each of the first to fourthsemiconductor switching elements includes a MOS-FET which is configuredto be turned on/off in response to a voltage applied to a gate thereoffrom the control circuit. Alternatively, the power element may include,for example, an N-type power MOS-FET which includes the controlelectrode as a gate, the first main electrode as a source, and thesecond main electrode as a drain. Each of the first to fourthsemiconductor switching elements may include a MOS-FET which isconfigured to be turned on/off in response a voltage applied to a gatethereof from the control circuit.

The semiconductor element having the positive temperature characteristicmay be formed of, for example, a Zener diode of which a reversebreakdown voltage increases with temperature increase. The constantvoltage supply may include a constant-voltage diode circuit which istemperature compensated and outputs a constant voltage regardless oftemperature change.

Preferably, in an normal operation for turning the power element on/off,the control circuit may be configured to turn the power element on byturning on each of the first and fourth semiconductor switching elementsand turning off each of the second and third semiconductor switchingelements, and turn the power element off by turning off each of thefirst and fourth semiconductor switching elements and turning on each ofthe second and third semiconductor switching elements.

At the time of short-circuit interruption in which the power element isforcibly turned off, the control circuit may be configured to turn oneach of the first and third semiconductor switching elements and turnoff each of the second and fourth semiconductor switching elements.Alternatively, at the time of the short-circuit interruption in whichthe power element is forcibly turned off, the control circuit may beconfigured to turn on each of the second and fourth semiconductorswitching elements and turn off each of the first and thirdsemiconductor switching elements.

According to an embodiment of the present invention, the power elementcan be positively biased with a constant voltage stably, regardless of achange in the operation voltage threshold value of the power element, byutilizing the positive temperature characteristic of the reversebreakdown voltage of the Zener diode provided in the first seriescircuit. Alternatively, according to an embodiment of the presentinvention, the power element can be positively biased stably, byapplying a predetermined voltage capable of stably maintaining its onstate to the gate of the power element, regardless of a change in theoperation voltage threshold value of the power element under theconstant voltage diode circuit which outputs a constant voltage.

Thus, regardless of a change in the operation voltage threshold valueVth of the power element (IGBT) depending on temperature, the powerelement can be surely turned on by being positively biased stably withthe constant voltage, and thus the on state of the power element can bemaintained stably. Further, it is also not necessary to apply anexcessive electric field to the gate of the power element in prospectof, for example, a change in a power supply voltage. Furthermore, thepower element can be positively biased with the constant voltage, andthus short-circuit withstand capability required for the power elementcan be reduced. Consequently, such an effect can be attained that thepower element is not required to have excessive specifications and acost of the power element thereof can be reduced.

According to an embodiment of the present invention, a switching loss ofthe power element (IGBT) at the turn-on/off times of the power elementcan be reduced without using the gate resistor in the drive circuit ofthe related art shown in FIG. 6 by way of example. Further, the drivecircuit for the power element can be formed as a compact integratedcircuit, and thus such a practically significant benefit is attainedthat the circuit configuration thereof can be simplified and themanufacturing cost thereof can be reduced.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic configuration diagram showing the general outlineof a drive circuit for a power element according to an embodiment of thepresent invention.

FIG. 2 is a diagram showing the concrete configuration example of thedrive circuit shown in FIG. 1.

FIG. 3 is a diagram showing another configuration example of a controlcircuit in the drive circuit shown in FIG. 2.

FIG. 4 is a diagram showing still another configuration example of thecontrol circuit in the drive circuit shown in FIG. 2.

FIG. 5 is a diagram showing another concrete configuration example ofthe drive circuit shown in FIG. 1.

FIG. 6 is a schematic configuration diagram showing an example of adrive circuit for a power element of a related art.

FIG. 7 is a timing chart showing turn-on/off states of a power elementby the drive circuit for the power element of the related art.

DETAILED DESCRIPTION OF EMBODIMENTS

Hereinafter a drive circuit 10 for a power element according to anembodiment of the present invention will be explained with reference todrawings.

FIG. 1 is a schematic configuration diagram showing the general outlineof the drive circuit 10 for the power element according to theembodiment of the present invention. In the figure, portions identicalto those of the drive circuit 1 of the related art shown in FIG. 6 arereferred to by the common symbols.

The drive circuit 10 includes a first series circuit which is configuredof a first semiconductor switching element Q1 and a second semiconductorswitching element Q2 which are connected in series with a Zener diodeZD, which has, for example, a positive temperature characteristic,therebetween. The first series circuit is provided between a powersupply terminal (Vcc) and a ground terminal (GND). A series connectionpoint (node P1) between the anode of the diode ZD and the secondsemiconductor switching element Q2 provided on the ground terminal sideis connected to the gate of an IGBT 2. Further, the drive circuit 10includes a second series circuit which includes a third semiconductorswitching element Q3 and a fourth semiconductor switching element Q4connected in series. The second series circuit is provided between thepower supply terminal (Vcc) and the ground terminal (GND). A seriesconnection point (node P2) between the third semiconductor switchingelement Q3 and the fourth semiconductor switching element Q4 isconnected to the emitter of the IGBT 2.

The first to fourth semiconductor switching elements Q1, Q2, Q3, Q4 areeach formed of, for example, a MOS-FET. Specifically, the first tofourth semiconductor switching elements Q1, Q2, Q3, Q4 are respectivelyformed of switching MOS-FETs which have basically the same switchingcharacteristic, the same current capacity, and the same withstandvoltage. The first to fourth semiconductor switching elements Q1, Q2,Q3, Q4 constitute a switch matrix circuit wherein the first to fourthsemiconductor switching elements are turned on/off in association withone another under the control of a control circuit 5, and thus turn theIGBT 2 on/off.

In particular, the switch matrix circuit directly applies a voltage ofthe series connection point (node P1) between the anode of the Zenerdiode ZD and the second semiconductor switching element Q2 provided onthe ground terminal side to the gate of the IGBT 2 without using thegate resistor RG in the drive circuit 1 of the related art shown in FIG.6 by way of example. Further, the feature of the switch matrix circuitis that a voltage of the node P2, which serves as the series connectionpoint between the third and fourth semiconductor switching elements Q3,Q4, is applied to the emitter of the IGBT 2.

Basically, in a normal operation for turning the IGBT 2 on/off, thedrive circuit 10 turns the IGBT 2 on by turning on each of the first andfourth semiconductor switching elements Q1, Q4 and turning off each ofthe second and third semiconductor switching elements Q2, Q3. At thetime of turning the IGBT 2 on, the emitter of the IGBT 2 is set to 0 Vand the gate thereof is applied with the power supply voltage Vcc. As aconsequence, the IGBT 2 is applied with the power supply voltage Vccbetween the gate and the emitter thereof, and thus put in a positivelybiased state.

Further, the drive circuit 10 turns the IGBT 2 off by turning off eachof the first and fourth semiconductor switching elements Q1, Q4 andturning on each of the second and third semiconductor switching elementsQ2, Q3. At the time of turning the IGBT 2 off, the gate of the IGBT 2 isset to 0 V and the emitter thereof is applied with the power supplyvoltage Vcc. As a consequence, the IGBT 2 is basically applied with thenegative power supply voltage (−Vcc) between the gate and the emitterthereof, and thus put in a negatively biased state.

The IGBT 2 has a negative temperature characteristic in which anoperation voltage threshold value Vth thereof decreases with temperatureincrease. In contrast, the Zener diode ZD is a semiconductor elementwhich has a positive temperature characteristic in which a reversebreakdown voltage Vr thereof increases with temperature increase. Whenthe first semiconductor switching element Q1 is on, the first seriescircuit configured to include the Zener diode ZD generates, at the nodeP1, a voltage (Vcc−Vr) wherein the reverse breakdown voltage Vr of theZener diode ZD is subtracted from the power supply voltage (Vcc). Thevoltage (Vcc−Vr) of the node P1 is applied to the gate of the IGBT 2. Asa result, the positive voltage (Vcc−Vr) is applied between the gate andthe emitter of the IGBT 2, and therefore the IGBT is put in a positivelybiased state.

Thus, when the operation voltage threshold value Vth of the IGBT 2changes by a change in the temperature in a state where the firstsemiconductor switching element Q1 is on and the IGBT 2 is on, thevoltage applied to the gate of the IGBT 2 from the node P1 also changescorrespondingly. In other words, the voltage (Vcc−Vr) positively biasingthe IGBT 2 also changes in accordance with the temperature change in theoperation voltage threshold value Vth of the IGBT 2. Further, thevoltage of the node P is directly applied to the gate of the IGBT 2.

As a result, in the state of positively biasing the IGBT 2, a voltagecapable of maintaining the on state of the IGBT 2 is applied to the gateof the IGBT 2 in accordance with a change in the operation voltagethreshold value Vth of the IGBT 2. Thus, an excessive voltage equal toor larger than a voltage necessary for maintaining the on state of theIGBT 2 is not applied to the gate thereof. As a result, it is notnecessary to set a large voltage as the voltage applied to the gate ofthe IGBT 2 in prospect of a change in the operation voltage thresholdvalue Vth of the IGBT 2. In other words, it is not necessary to set theshort-circuit withstand capability required for the IGBT 2 to be largerthan necessary, and thus the IGBT 2 less expensive and having necessaryshort-circuit withstand capability can be employed. Accordingly, theconfiguration of a power converter utilizing the on/off operation of theIGBT 2 can be simplified.

A constant voltage element ZDT which generates a constant voltage may beemployed in place of the Zener diode ZD having the positive temperaturecharacteristic described above. The constant voltage element ZDT isachieved, for example, as a temperature-compensated constant-voltagediode circuit which generates a constant reverse breakdown voltageregardless of temperature change. Specifically, although not shownparticularly, the constant voltage element is achieved as a circuitwhich, using a Zener diode ZD having a positive temperaturecharacteristic and a diode D having a negative temperaturecharacteristic, compensates a change in the reverse breakdown voltage ofthe Zener diode ZD with a forward voltage of the diode D connected inseries with the Zener diode, and thereby generating a constant voltageregardless of temperature change.

Also in the drive circuit 10 which uses the constant voltage element ZDTin place of the Zener diode ZD described above, the positive biasvoltage applied to the gate of the IGBT 2 can be suppressed to a voltagenecessary for the on operation of the IGBT. Thus, also in this case, itis not necessary to set the short-circuit withstand capability requiredfor the IGBT 2 to be larger than necessary, and thus the IGBT 2 lessexpensive and having necessary short-circuit withstand capability can beemployed. Further, the configuration of the power converter utilizingthe on/off operation of the IGBT 2 can be simplified.

The control circuit 5 which turns on/off the first to fourthsemiconductor switching elements Q1, Q2, Q3, Q4 in association with oneanother is configured as shown in, for example, FIG. 2. Specifically,the control circuit 5 includes a first inverter circuit 5 a whichinverts a control signal SG to generate a drive signal for turningon/off the first and fourth semiconductor switching elements Q1, Q4. Thedrive signal outputted from the first inverter circuit 5 a takes abinary value, that is, the power supply voltage Vcc of a power supply 4or the voltage (0 V) of the ground terminal so as to turn on/off thefirst and fourth semiconductor switching elements Q1, Q4.

The control circuit 5 further includes a second inverter circuit 5 bwhich inverts the output of the first inverter circuit 5 a to generate adrive signal for turning on/off the second and third semiconductorswitching elements Q2, Q3. The drive signal outputted from the secondinverter circuit 5 b also takes a binary value of the power supplyvoltage Vcc of the power supply 4 or the voltage (0 V) of the groundterminal.

According to the control circuit 5 configured in this manner, the firstand second semiconductor switching elements Q1, Q2 connected in seriesare turned on/off in an opposite manner by receiving the respectiveoutputs from the first and second inverter circuits 5 a. 5 b. The thirdand fourth semiconductor switching elements Q3, Q4 connected in seriesare also turned on/off in an opposite manner by receiving the respectiveoutputs from the second and first inverter circuits 5 b, 5 a. Thecontrol circuit 5 performs the on/off control of the IGBT 2 byperforming the on/off control of the first to fourth semiconductorswitching elements Q1, Q2, Q3, Q4 in association with one another,whereby the IGBT 2 is turned on and off.

When short-circuit is detected on a load side to which a current Ic issupplied via the IGBT 2, the IGBT 2 is forcibly turned off, whereby theIGBT 2 and the load (RL) are each protected from an excessiveshort-circuit current and further the drive circuits 10 are alsoprotected.

The protection operation for the IGBT 2 by the short-circuitinterruption is achieved, for example, by turning on each of the firstand third semiconductor switching elements Q1, Q3 and turning off eachof the second and fourth semiconductor switching elements Q2, Q4.Specifically, in the case of forcibly turning on each of the first andthird semiconductor switching elements Q1, Q3 at the time of detectingthe short-circuit, it is required to constitute the control circuit 5 asshown in, for example, FIG. 3 so as to switch respective on/off signalssupplied to the first to fourth semiconductor switching elements Q1, Q2,Q3, Q4 in accordance with a short-circuit detection signal CO.

The control circuit 5 shown in FIG. 3 includes four AND circuits 51 a,51 b, 51 c, 51 d of which gates are each opened in accordance with theshort-circuit detection signal CO. The AND circuits 51 a. 51 b, 51 c, 51d are each opened via an inverter circuit 52 when the short-circuitdetection signal CO is not supplied, in other words, when theshort-circuit detection signal CO is at a low level (L) and so the IGBT2 is to be normally operated. The AND circuits 51 a, 51 b, 51 c, 51 dsupply the control signals SC or signals, which are obtained byinverting the control signals SG via an inverter circuit 53, to drivecircuits 54 a, 54 b, 54 c. 54 d, respectively. The drive circuits 54 a,54 b, 54 c, 54 d generate output voltages necessary for turning on/offthe first to fourth semiconductor switching elements Q1, Q2, Q3, Q4,respectively.

In contrast, the AND circuits 51 a. 51 b, 51 c, 51 d are each closedwhen the short-circuit detection signal CO is supplied thereto, in otherwords, when the short-circuit detection signal CO becomes a high level(H). In this case, the short-circuit detection signal CO is supplied tothe drive circuits 54 a, 54 c via respective OR circuits 55 a, 55 c.And, the short-circuit detection signal CO, which is inverted via theinverter circuit 52, is supplied to the drive circuits 54 b, 54 d viathe respective AND circuits 51 b, 51 d.

Thus, when the short-circuit detection signal CO is supplied, the firstand third semiconductor switching elements Q1, Q3 are each forciblyturned on, and concurrently, the second and fourth semiconductorswitching elements Q2, Q4 are each forcibly turned off. As a result, thegate voltage V(G) of the IGBT 2 is set to the voltage (Vcc−Vr) and theemitter voltage V(E) of the IGBT 2 is set to the power supply voltageVcc. Thus, the gate emitter voltage of the IGBT 2 is negatively biasedby the reverse breakdown voltage Vr of the Zener diode ZD and thus theIGBT 2 is forcibly set to an off state. The current Ic flows into theload (RL) is interrupted in association with the forcible turning-off ofthe IGBT 2, and so the IGBT 2, etc. are protected from an overcurrentcaused by the load short-circuit.

According to the drive circuit 10 configured in this manner, each of thefirst and third semiconductor switching elements Q1, Q3 is turned on,the voltage applied to the gate of the IGBT 2 is set to the voltage(Vcc−Vr), and the voltage applied to the emitter of the IGBT 2 is set tothe power supply voltage Vcc. In this case, during a time periodrequired for charging the gate capacitor of the IGBT 2, the gate emittervoltage Vge of the IGBT 2 is a negative voltage, and so the IGBT 2 isturned off. Accompanied with the turning-off of the IGBT 2, the gatecapacitor of the IGBT 2 is discharged via the first semiconductorswitching element Q1. Consequently, the gate emitter voltage Vge of theIGBT 2 is kept to the voltage (−Vf), and thus the IGBT 2 is kept to benegatively biased and maintains an off state.

Thus, even in the case of forcibly turning on each of the first andthird semiconductor switching elements Q1, Q3 at the time of detectingthe short-circuit, unlike the related art, the charging/discharging ofthe gate capacitor of the IGBT 2 is not performed via the gate resistorRG. Accordingly, a switching loss at the turn-off time of the IGBT 2 canbe reduced. Consequently, a consumption power of the drive circuit 10can be reduced.

Incidentally, in the short-circuit interruption, each of the second andfourth semiconductor switching elements Q2, Q4 can be forcibly turned onin place of the forcible turning-on of each of the first and thirdsemiconductor switching elements Q1, Q3. In this case, it isindisputable that each of the first and third semiconductor switchingelements Q1, Q3 is forcibly tuned off in conjunction with the forcibleturning-on of each of the second and fourth semiconductor switchingelements Q2, Q4.

In this manner, when the first and third semiconductor switchingelements Q1, Q3 are each tuned off, and simultaneously, the second andfourth semiconductor switching elements Q2, Q4 are each tuned on, thegate voltage V(G) of the IGBT 2 is set to the ground voltage (0 V) and,the emitter voltage V(E) of the IGBT 2 is also set to the ground voltage(0 V). As a result, the gate emitter voltage Vge of the IGBT 2 becomes 0V, and thus the IGBT 2 is forcibly turned off. The current Ic flows intothe load (RL) is interrupted in association with the forcibleturning-off of the IGBT 2, whereby the IGBT 2, etc. are protected froman overcurrent caused by the load short-circuit.

Incidentally, in the case of forcibly turning on each of the first andthird semiconductor switching elements Q1, Q3 as described above whenthe short-circuit detection signal CO is supplied, it is only requiredto constitute the control circuit 5 as shown in, for example, FIG. 4.The control circuit 5 shown in FIG. 4 is configured that theshort-circuit detection signal CO is supplied to the drive circuits 54b, 54 d via respective OR circuits 55 b, 55 d, and that theshort-circuit detection signal CO, which is inverted by the invertercircuit 52, is supplied to the drive circuits 54 a, 54 c via therespective AND circuits 51 a, 51 c.

According to the drive circuit 10 configured in this manner, only thesecond and fourth semiconductor switching elements Q2, Q4 having thesmall on-resistances Ron are turned on, and thus a switching loss at theturn-off time of the IGBT 2 can be further reduced. Thecharging/discharging of the gate capacitor of the IGBT 2 is notperformed via the gate resistor RG, a power consumption of the drivecircuit 10 can be reduced correspondingly.

Further, the gate resistor RG used in the drive circuit 1 of the relatedart is eliminated, and so the first semiconductor switching element Q1can be downsized. Thus, when forming the drive circuit 10 as anintegrated circuit, a chip area thereof can be reduced. Further, thegate resistor RG is not required to be formed side by side with theMOS-FET, etc. on a semiconductor chip, and thus such an effect can beattained that a manufacturing cost of the drive circuit can besuppressed low.

In the above-described explanation, the example is shown in which aP-type MOS-FET is used as each of the first and third semiconductorswitching elements Q1, Q3 and an N-type MOS-FET is used as each of thesecond and fourth semiconductor switching elements Q2, Q4. As shown inFIG. 5 by way of example, however, the switch matrix circuit can beconfigured using an N-type MOS-FET as each of the first to fourthsemiconductor switching elements Q1, Q2, Q3, Q4. In this case, it isalso indisputable that the MOS-FET having a larger on-resistance Ronthan the second to fourth semiconductor switching elements Q2, Q3, Q4 isused as the first semiconductor switching element Q1.

In this case, a tuning-on operating condition of the first and thirdsemiconductor switching elements Q1, Q3 formed of the N-type MOS-FETsdiffers from the tuning-on operating condition of the first and thirdsemiconductor switching elements Q1, Q3 formed of the P-type MOS-FETs inthe drive circuit 10 shown in FIG. 2. That is, the first and thirdsemiconductor switching elements Q1, Q3 turn on/off in accordance withthe voltages of the respective nodes P1, P2, as reference voltages,which change in accordance with the turning-on/off of the first tofourth semiconductor switching elements Q1, Q2, Q3, Q4.

Thus, in this case, as shown in FIG. 5, the control circuit 5 isrequired to be configured that the input and output of an invertercircuit 5 c, which inverts the control signal SC are supplied to thegates of the third and first semiconductor switching elements Q3, Q1 vialevel shift circuits 5 e, 5 d, respectively. Also in the drive circuit10 in which the switch matrix circuit is configured using the N-typeMOS-FET as each of the first to fourth semiconductor switching elementsQ, Q2, Q3, Q4 in this manner, the voltage of the node P1 as the seriesconnection point between the first and second semiconductor switchingelements Q1, Q2 is directly applied to the gate of the IGBT 2. Thus,effects similar to that of the above-described embodiment can beattained.

Incidentally, the invention is not limited to the above-describedembodiment. For example, although not illustrated in particular, it isof course possible to use a P-type MOS-FET as each of the first tofourth semiconductor switching elements Q1, Q2, Q3, Q4. Alternatively,it is of course possible to use an N-type MOS-FET as each of the firstand second semiconductor switching elements Q1, Q2 and a P-type MOS-FETas each of the third and fourth semiconductor switching elements Q3, Q4.

Further, as described above, the present invention can also be appliedto the case of driving a power MOS-FET as the power element. Moreover,it is indisputable that a bipolar transistor may be used as each of thefirst to fourth semiconductor switching elements Q1, Q2, Q3, Q4. Theconfiguration of the control circuit 5 can be changed in various mannersaccording to the configuration of the switch matrix circuit and theturn-on/off states. etc. of the first to fourth semiconductor switchingelements Q1, Q2, Q3, Q4 constituting the switch matrix circuit. Thepresent invention can be implemented in such a way as to be changed invarious manners in a range not departing from the gist of the invention.

1. A drive circuit for turning on/off a power element which isconfigured to control a main current flow between a first main electrodeand a second main electrode in response to a drive signal applied to acontrol electrode, the drive circuit comprising: a first series circuitwhich includes a first semiconductor switching element and a secondsemiconductor switching element connected in series with a semiconductorelement or a constant voltage element therebetween, which is providedbetween a power supply terminal and a ground terminal, wherein thesemiconductor element or the constant voltage element has a positivetemperature characteristic, and wherein a series connection point of thesecond semiconductor switching element provided on the ground terminalside and the semiconductor element or the constant voltage elementhaving the positive temperature characteristic is connected to thecontrol electrode of the power element; a second series circuit whichincludes a third semiconductor switching element and a fourthsemiconductor switching element connected in series, which is providedbetween the power supply terminal and the ground terminal, wherein aseries connection point of the third semiconductor switching element andthe fourth semiconductor switching element is connected to the secondmain electrode of the power element; and a control circuit which isconfigured to control turn-on/off of the power element by turning on/offthe first to fourth semiconductor switching elements in association withone another in response to a control signal.
 2. The drive circuitaccording to claim 1, wherein the semiconductor element having thepositive temperature characteristic includes a Zener diode of which areverse breakdown voltage increases with temperature increase, andwherein the first series circuit is configured to change a voltageapplied to the control electrode of the power element in accordance witha change in an operation voltage threshold value of the power elementwhen the first semiconductor switching element is turned on.
 3. Thedrive circuit according to claim 1, wherein the constant voltage elementincludes a temperature-compensated constant-voltage diode circuit whichis configured to generate a constant reverse breakdown voltageregardless of temperature change, and wherein the first series circuitis configured to apply, when the first semiconductor switching elementis turned on, a voltage necessary for turning the power element onregardless of a change in an operation voltage threshold value of thepower element.
 4. The drive circuit according to claim 1, wherein in anormal operation for turning the power element on/off, the controlcircuit is configured to: turn the power element on by turning on eachof the first and fourth semiconductor switching elements and turning offeach of the second and third semiconductor switching elements, and turnthe power element off by turning off each of the first and fourthsemiconductor switching elements and turning on each of the second andthird semiconductor switching elements.
 5. The drive circuit accordingto claim 1, wherein at a time of forcibly turning the power element off,the control circuit is configured to turn on each of the first and thirdsemiconductor switching elements and turn off each of the second andfourth semiconductor switching elements.
 6. The drive circuit accordingto claim 1, wherein at a time of forcibly turning the power element off,the control circuit is configured to turn on each of the second andfourth semiconductor switching elements and turn off each of the firstand third semiconductor switching elements.
 7. The drive circuitaccording to claim 1, wherein the power element includes an IGBT whichincludes the control electrode as a gate, the first main electrode as acollector, and the second main electrode as an emitter, and wherein eachof the first to fourth semiconductor switching elements includes aMOS-FET which is configured to be turned on/off in response to a voltageapplied to a gate thereof from the control circuit.
 8. The drive circuitaccording to claim 1, wherein the power element includes an N-type powerMOS-FET which includes the control electrode as a gate, the first mainelectrode as a drain, and the second main electrode as a source, andwherein each of the first to fourth semiconductor switching elementsincludes a MOS-FET which is configured to be turned on/off in responseto a voltage applied to a gate thereof from the control circuit.